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| Schottky Barrier Diodes (SBD) MA3X701 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.65 0.15 2.8 - 0.3 1.5 - 0.05 + 0.25 + 0.2 0.65 0.15 0.95 2 I Absolute Maximum Ratings Ta = 25C Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 30 30 700 5 125 -55 to +150 V V mA A C C 1.1 - 0.1 + 0.2 Parameter Symbol Rating Unit 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) Marking Symbol: M4P Internal Connection 1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time*2 Thermal resistance (1) Thermal resistance (2)*1 Symbol IR VF Ct trr Rth(j-a)(1) Rth(j-a)(2) VR = 30 V IZ = 700 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 120 7.5 420 330 Conditions Min Typ Max 80 0.55 Unit A V pF ns C/W C/W Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 3. *1 : Obtained by fixing the element to the printed-circuit board (copper foil area 0.8 mm x 20 mm) *2 : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0 to 0.1 0.1 to 0.3 0.4 0.2 0.8 0.16 - 0.06 + 0.1 0.4 - 0.05 + 0.1 * Mini type 3-pin package * Allowing to rectify under (IF(AV) = 700 mA) condition 1.9 0.2 2.9 - 0.05 1 3 + 0.2 0.95 1.45 I Features 1 MA3X701 IF V F 1 0.8 0.7 Schottky Barrier Diodes (SBD) VF Ta 104 Ta = 125C 103 IR VR 10-1 Ta = 125C Forward voltage VF (V) Forward current IF (A) 10-2 75C 25C - 20C 0.6 0.5 0.4 0.3 0.2 0.1 100 mA 10 mA Reverse current IR (A) IF = 700 mA 102 75C 10-3 10 25C 1 10-4 10-5 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 10-1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 10 000 VR = 30 V 1 000 Ct VR 300 1 000 IF(surge) tW Ta = 25C 300 tW 100 30 10 3 1 0.3 0.1 0.1 IF(surge) Reverse current IR (A) 15 V 6V Terminal capacitance Ct (pF) 250 200 100 150 10 100 1 50 0.1 -40 0 0 40 80 120 160 200 Forward surge current IF(surge) (A) 0 5 10 15 20 25 30 0.3 1 3 10 30 100 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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